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Abstract
High‐resolution transmission electron microscopy has been used to study the effect of hexagonal boron nitride (h‐BN) on the stability of SiC polytypes in Si3N4‐particulatereinforced SiC composites in which h‐BN particles appeared as a trace contaminant. In contrast to previous transmission electron microscopy work on SiC‐BN composites, our results imply that there is no clear preference for a particular SiC polytype to be stabilized by h‐BN nearby. Instead, we propose that previous observations suggesting that the 3C SiC polytype is stabilized by h‐BN can be simply explained in terms of it being stabilized indirectly by nitrogen arising from BN dissociation during processing.
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