Abstract
The effect of bismuth oxide on the sheet resistivity and TCR of ruthenium dioxide based resistors has been studied. It has been observed that bismuth oxide decreases the sheet resistivity and shifts the TCR towards the positive direction. It also enhances the formation of complex ruthenates and results in much lower requirement of RuO2 than otherwise found necessary. An excess of bismuth oxide, on the other hand, may often result in the flow of glass which in turn will impair the geometry of the print.
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