Effect of biologically synthesized iron-oxide nanoparticles insulating layer on current-voltage characteristics of Ni/Cr/Ni/n-GaN Schottky junction

Abstract

The microstructural and electrical properties of a prepared Ni/Cr/Ni/FeO/n-GaN metal/oxide/semiconductor (MOS) heterojunction (HJ) (as-deposited and after 600 °C annealing) with biologically synthesized iron oxide (FeO) nanoparticles as an insulating layer are investigated. The formation of FeO films at the junction is confirmed by the measurements of FESEM and XRD analysis. The HJ electrical results are associated with Ni/Cr/Ni/n-GaN metal/semiconductor (MS) Schottky junction (SJ) results. The as-deposited and 600 °C annealed HJs exhibit exceptional rectifying efficiency and incredibly low reverse leakage current compared to the SJ. The 600 °C annealed HJ had a higher Φb than both as-deposited HJ and SJ, indicating that the FeO insulating layer has an impact on the Φb of the devices. The outcomes demonstrate that the Φb values are better for 600 °C annealed junctions. Furthermore, Cheung’s, Norde, and ΨS-V method-based plots are used to analyze the Φb, series resistance (RS), ideality factor (n), and the resultant values are found to be comparable, indicating consistency and validity. Due to the fact that the HJs interface state density (NSS) is lower than that of SJ, the FeO layer is crucial to the decreased NSS. A transition from Poole-Frenkel emission at low voltages to Schottky emission at high voltages was also seen in the SJ. Furthermore, the HJ showed Schottky emission throughout the whole voltage range. Furthermore, trustworthily energy level band diagrams may be used to explain the Φb modulation process, leading to the conclusion that the FeO layer is a suitable material for the design of novel electronic device applications.