Effect of biaxial strain on the electronic structure and optical properties of two-dimensional Bi2Te2S

Abstract

In this work, the effects of biaxial strain on the electronic structure and optical properties of monolayer Bi2Te2S are studied by the first-principles methods. The calculated results show that the monolayer Bi2Te2S is an indirect band gap semiconductor with a band gap of 1.0 eV. The absence of imaginary frequency in the phonon spectrum indicates that the structure can exist stably. With the increase of tensile strain, the band gap value decreases approximately quasi-linearly. When 10 % tensile strain is applied, the band gap value is reduced to 0 eV, achieving the transition from an indirect bandgap semiconductor to a direct bandgap semiconductor. With the increase of compressive strain, the band gap value increases first and then decreases, and the band gap value reaches a maximum of 1.28 eV at −4 % strain. Combined with the density of states analysis, the reason for this change in the band structure is that the contribution of Bi 6p, Te 5p and S 3p state electrons to the conduction band and valence band changes under different strains. The effect of strain on the optical properties shows that when different strains are applied, the monolayer Bi2Te2S has a high absorption coefficient in the entire visible region. The single-layer Bi2Te2S material has a smaller refractive index under tensile strain. The static dielectric function value increases with the increase of tensile strain, and the peak value of the dielectric function decreases and moves to the low energy direction. This indicates that the tensile strain will enhance the migration of photogenerated electron-hole pairs, which is beneficial to improving the utilization of light. This work will provide a theoretical reference for the subsequent study of the electronic and optical properties of monolayer Bi2Te2S.