Abstract
Neutron detection signatures in thin films of semiconducting boron carbide were measured as a function of three applied reverse bias voltages, 0, 1.57 V and 3.15 V. Thermal neutrons were detected at zero bias. As the bias was increased, an increase in efficiency and in peak channel positions was observed. These two significant effects have been attributed to an increase in charge collection at higher bias voltages.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
