Abstract
The effect of Bi0.90La0.10Fe0.90Zn0.10O3 (BLFZO) thicknesses on the microstructure and multiferroic properties of BiFeO3 (BFO) thin films was investigated, and all bilayered thin films were grown on Pt-coated silicon substrates without any buffer layers by a radio frequency sputtering. A (110) orientation is dominant in all the bilayers, and two grain growth modes are identified in these bilayers by using an atomic force microscope, where different grain growth modes significantly affect their leakage behavior. The dielectric constant (εr) of bilayers gradually increases, and magnetic properties were deteriorated with the addition of BLFZO with a higher εr and a weaker magnetic behavior. An enhanced ferroelectric behavior of 2Pr ∼ 116.2 μC/cm2 and 2Ec ∼ 524 kV/cm could be observed in the BFO/BLFZO bilayered thin film with 80 nm BLFZO layer owing to a higher orientation degree of (110) and an interface coupling together with a lower leakage current density. As a result, electrical properties of BFO could be tailored by modifying the thicknesses of BLFZO.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
