Abstract
CuInS2 is a good absorber for solar cell and photovoltaic devices. In this work, Bi-doped (0.1 M) CuInS2 thin films are deposited in the temperature range of 300–400 °C. Bi doping and temperature affect the growth of polycrystalline CuInS2 thin films. EDAX confirms the presence of Bi, Cu, In and S in the films. Optical studies show that the Bi doped crystals grown in the temperature of 300 °C can be used as an efficient absorber for solar cell and photovoltaic applications. About 80% light transmission is observed in the temperature range of 325–400 °C. The band gap energy increases from 1.53 to 2.0 eV as the temperature increases from 300 to 400 °C. SEM photographs depict accelerated growth of crystals due to the formation of some mediate products in the molten phase. The intensity of PL emission is suppressed by the oxygen content in the films. Electrical studies show the semiconducting nature of thin films.
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