Abstract
This paper examines the effect of Bi doping on the short-range order in amorphous (GeSe)1 − xBix (0 ≤ x ≤ 0.15) films and their electrical properties. Electron diffraction results demonstrate that the structure of the films can be described by a model typical of GeSe-Bi2Se3 solid solutions. Bi doping changes the charge transport mechanism and leads to type inversion in the amorphous (GeSe)1 − xBix films.
Published Version
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