Abstract
This paper examines the effect of Bi doping on the short-range order in amorphous (GeSe)1 − xBix (0 ≤ x ≤ 0.15) films and their electrical properties. Electron diffraction results demonstrate that the structure of the films can be described by a model typical of GeSe-Bi2Se3 solid solutions. Bi doping changes the charge transport mechanism and leads to type inversion in the amorphous (GeSe)1 − xBix films.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
