Abstract
In order to obtain pressureless-sintered SiC ceramics with high thermal conductivity, effect of BeO addition on sintering properties boron-doped β-SiC powder was investigated. The β-SiC powder was produced by the plasma arc method from SiH4, B2H6 and CH4 gases. Pressureless-sintered boron-doped β-SiC ceramics showed high thermal conductivity of 180 W·m-1·K-1 and electrical resistivity of 1100Ω·m (10mV). On the other hand, pressureless-sintered boron-doped β-SiC ceramics containing BeO showed varistor characteristics with electrical resistivity of 1011Ω·m at 10V, and thermal conductivity of 230 W·m-1·K-1. These ceramics consisted of net-like elongated β-SiC grains. Thus, addition of BeO increased the thermal conductivity and electrical resistivity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
