Abstract
Electrodeposition is a promising and low cost method to synthesize CuInx Ga1−x Se2 (CIGS)thin films as an absorber layer for solar cells. The effect of bath temperature on the properties of CIGS thin films was investigated in this paper. CIGS films of 1 μm thickness were electrodeposited potentiostatically from aqueous solution, containing trisodium citrate as a complexing agent, on Mo/glass substrate under a voltage of −0.75 V, and bath temperatures were varied from 20 to 60°C. The effects of bath temperature on the properties of CIGS thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy. XRD revealed the presence of the CuIni0.7Ga0.3 Se2 phase, the optimal phase for application in solar cells. The grain dimensions and crystallizability increase along with the increase of the bath temperature, and the films become stacked and homogeneous. There were few changes in surface morphology and the composition of the films.
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