Abstract
We present a finite temperature theory for bias-dependent tunnelling inferromagnetic tunnelling junctions. The effects of the barrier width don the tunnelling magnetoresistance (TMR) and its sign change behaviourare discussed with this theory. Numerical results show that both thezero-bias TMR and the critical voltage Vc at which the TMR changesits sign decrease with the increasing barrier width for a considerablythick barrier junction. Furthermore, it is found that a minimum existsin the curve of Vc versus d if a composite junction is underoxidized.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
