Abstract
InGaN/GaN multiple quantum well (MQW) structures with different GaN barrier growth temperatures have been grown by metallorganic chemical vapor deposition (MOCVD) and investigated. Double peak InGaN emission was observed and correlated to the barrier growth temperature. It was deduced that the extra emission peak originated from InGaN/GaN nanostructures formed around (VGa-ON)2− point defects mainly at the bottom wells of MQW stack, due to local strain relaxation in the vicinity of point defects and the compositional pulling effect on In. Increasing barrier growth temperature decreases O impurity incorporation and thus prevents the formation of an undesired radiation source in the active layer which decrease the quantum efficiency.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
