Abstract
The large area (2D) technology for high temperature superconducting (HTS) Josephson junctions and circuits we are developing is based on the ion damage process established at LPEM [1, 2]. The aim of this work was to do a statistical analysis of the effect of geometrical parameters on Josephson junctions properties. Only junction length and barrier thickness are varied; film thickness is kept constant at a nominal 150nm. Statistical analysis of characteristic parameters (Ic, Rn, temperature range of operation...) is presented.
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