Abstract
The effect of the quasi-Fermi level discontinuity and the electrostatic potential nonlinearity on the transconductance, junction capacitance, base transit time and the emitter charge time of heterojunction bipolar transistors (HBT) are investigated. The analysis takes into account the effect of the thermionic emission boundary condition at the heterojunction interface on the base transit time, the transconductance and the junction capacitance. It is evident from the analysis that the base transit time and the transconductance are functions of the electrons injected from the emitter. Calculation shows that the effect of a high level of electron injection to the base on the base transit time is less effective for an abrupt bandgap emitter than that for a graded-gap emitter HBT.
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