Abstract
Full-band Monte Carlo simulation offers a very accurate simulation technique, but is often limited by its high demand on computation time. The advantage of a numerical representation of the band structure over an analytical approximation is the accurate representation of the energy bands in the high energy regime. This allows accurate treatment of hot carrier effects in semiconductors. In this work we outline an efficient full-band Monte Carlo (FBMC) simulator and investigate the accuracy of simulation results for different meshing approaches for the Brillouin zone.
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