Abstract
High field longitudinal conductivity in narrow band gap semiconductors has been investigated assuming the displaced Maxwellian distribution for carriers, occupying the lowest Landau subbands at low temperatures. The energy relaxation of carriers is due to acoustic phonon scattering via deformation potential dominant at low temperatures while the momentum relaxation is due to ionized impurity and elastic acoustic phonon scatterings. Furthermore, the effect of alloy scattering which is an important scattering mechanism for alloy semiconductors, such as HgCdTe, has been incorporated in the momentum relaxation time. The other complexities such as the magnetic field dependent free carrier screening and non-equipartition of phonons are included in the model. Finally, using the model, the effect of band non-parabolicity on the hot electron longitudinal conductivity of n-HgCdTe has been examined and the theoretical results are compared with the recent experimental results. Inclusion of nonparabolicity in the calculation is found to be important for analysing the experimental results.
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