Abstract
We calculate the low-temperature mobility of a two-dimensional (2D) electron gas in $\ensuremath{\delta}$-doped GaAs by solving coupled Boltzmann equations in the relaxation-time approximation using one-, two-, or three-subband models depending on the population of the subbands. We assume that the mobility is limited by ionized impurity scattering, including intersubband contribution. Our results suggest that the nonparabolicity of the conduction band plays the important role: it reduces the calculated 2D electron-gas mobility by about 20%, which leads to a better agreement with experimental data.
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