Abstract
In this paper, the effect of band non-parabolicity on the sub bands of nano-dimensional junctionless MOSFET have been presented using analytical models. Hence, one and two dimensional confinements have been considered. The energy Eigen values along the direction of propagation and the direction of confinement have also been analyzed separately. Besides, the values of effective mass along the direction of propagation and the direction of confinement have also been detailed separately for energy calculations. Moreover, the effect of channel width and channel height variations along with the confinements has been studied. This study would be efficacious for the circuit level implementation of the of nano-dimensional MOSFET using different semiconductor materials.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
