Abstract
In this paper, ZnO varistors prepared from submicron ZnO powders are studied, and the effects of different sintering temperatures and B203(0~1%mol) doping amount on the electrical properties of ZnO varistors are discussed. When the B 2 O 3 doping amount is about 0.50 mol%, the potential gradient and current flow capacity of varistor are the lowest. When the B 2 O 3 doping amount continues to increase, the potential gradient will slightly increase and the current flow capacity will be significantly enhanced. Doping B 2 O 3 has little effect on leakage current and nonlinear coefficient of ZnO-Y 2 O 3 varistor. Doping B 2 O 3 can effectively reduce the sintering temperature, and ZnO-Y 2 O 3 varistors have better electrical properties when the sintering temperature is 1110°C.
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