Effect of axial pressure on the capacitance of metal-tunneling-transparent oxide-semiconductor structures

Abstract

The effect of axial pressure on the capacitance of molybdenum-tunneling-transparent oxide-n-type silicon is studied. The capacitance was measured in the frequency band 1 kHz–10 MHz by the bridge method. The oxide was ∼5·10−9 m thick. It is shown experimentally that the effect of the pressure on the capacitance of the structures consists of a pressure-induced change in the surface charge of these structures. The largest changes in the capacitance are observed in structures based on (100) silicon at low measurement frequencies and are associated with the presence of an acceptor level, close to the Fermi level of silicon on the surface, at the silicon-oxide interface and pressure-induced recharging of the level.