Abstract
AbstractSolar cells formed by spin‐coating organic absorber layers on silicon have attracted widespread attention due to their simple processes and high photovoltaic conversion efficiency (PCE). In typical organic/Si solar cells, however, surface defects or unsatisfactory carrier separation are inadequate to yield excellent device performance. Here, the Au@MoS2 nanocomposites are well synthesized and doped into the organic layer of poly (3,4‐ethylenedioxythiophene)/polystyrene sulfonate (PEDOT:PSS) to improve its work function and the performance of PEDOT:PSS/Si HSCs consequently. By optimizing the doping level of Au@MoS2, the PCE significantly improved from 11.48% to 14.0% by tuning the work function of the PEDOT:PSS layer to more appropriate values. The calculated results based on the Mott–Schottky model indicate that the built‐in field in the PEDOT:PSS/Si interface of HSCs is significantly enhanced due to the increase of work function by the PEDOT:PSS thin films. The enhancement of the built‐in field results in the reduction of the electron–hole recombination loss effectively. The work provides a feasible method for preparing high‐performance PEDOT:PSS/Si HSCs.
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