Abstract
Au-precoating on silicon substrate was observed to enhance the field emission characteristics of diamond films deposited by chemical vapor deposition technique. The emission current density increased substantially from 1 /spl mu/A/cm/sup 2/ to 100 /spl mu/A/cm/sup 2/, while the turn on voltage decreased moderately from 14 MV/m to 10 MV/m. Raman spectra and electron diffraction in transmission electron microscopy (TEM) revealed that both diamond films deposited on Si or Au-coated Si (Au/Si) were nanosized crystals. The Au species were assumed to diffuse along grain boundaries, resulting in low resistance diamond films. Abundant supply of electrons via conducting grain boundaries was presumably the mechanism that enhanced the field emission of the diamond films grown on Au/Si substrates.
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