Effect of atomic structure on excitation of the electronic subsystem of a solid by a swift heavy ion

Abstract

An effect of different phase states of a solid on excitation of its electronic subsystem due to penetration of a swift heavy ion (SHI) is examined on example of silicon dioxide (crystalline quartz vs. amorphous glass). The complex dielectric function formalism describing collective response of the electronic and ionic subsystems of a condensed target to excitation is used to calculate scattering cross sections of a penetrating ion and electrons generated due to target ionizations. A Monte Carlo model based on these cross sections is applied for tracing electron kinetics in the nanometric vicinity of the trajectory of a swift heavy ion. It is demonstrated that differences of the maximal values of the SHI energy losses and the electron inelastic mean free paths calculated for two phase states of SiO2 do not exceed 10–15%, whereas the elastic mean free paths differ more significantly.