Abstract
The backscattering method is employed to investigate the effect of atmospheres on arsenic diffusion into silicon from the doped oxide layer. An effect of the coating of undoped silicon oxide and silicon nitride upon the surface of the doped oxide layer is also investigated. Arsenic atoms diffused more efficiently into silicon in oxygen atmosphere than in nitrogen atmosphere. An additional oxide layer was formed by oxidation of the silicon surface during the thermal diffusion in oxygen atmosphere and this layer exists between the doped oxide layer and the silicon substrate. It is considered that such an additional oxide layer may play an important role in the thermal diffusion of arsenic atoms into the silicon substrate.
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