Abstract
ZnO nanorod arrays are prepared on a silicon wafer through a multi-step hydrothermal process. The aspect ratios and densities of the ZnO nanorod arrays are controlled by adjusting the reaction times and concentrations of solution. The investigation of field emission properties of ZnO nanorod arrays revealed a strong dependency on the aspect ratio and their density. The aspect ratio and spacing of ZnO nanorod arrays are 39 and 167 nm (sample C), respectively, to exhibit the best field emission properties. The turn-on field and threshold field of the nanorod arrays are 3.83 V/μm and 5.65 V/μm, respectively. Importantly, the sample C shows a highest enhancement of factorβ, which is 2612. The result shows that an optimum density and aspect ratio of ZnO nanorod arrays have high efficiency of field emission.
Highlights
Nanoscale Res Lett (2008) 3:303–307 b was enhanced with increasing the aspect ratio of ZnO nanorods and the enhancement factor b was decreased with reducing the density of nanorods
The ZnO nanorod arrays were prepared on a silicon wafer (4 9 5 cm2) through a multi-step hydrothermal process [6]
The results show that the aspect ratio and the density of nanorod arrays play key roles in the field emission
Summary
ZnO is an important functional II–VI semiconductor compounds and have been extensively investigated for Nanoscale Res Lett (2008) 3:303–307 b was enhanced with increasing the aspect ratio of ZnO nanorods and the enhancement factor b was decreased with reducing the density of nanorods. Keyword ZnO nanorod Á Arrays Á Field emission Á Aspect ratio Á Density Zhao et al [16] investigated the morphological effects on the field emission of ZnO nanorod arrays. The result showed that the ZnO nanoneedle arrays exhibit excellent properties due to their small emitter radius and high nanorod density remarkably reduces the local field at the emitters owing to the screening effect.
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