Abstract
Electron traps in n-Al0.2Ga0.8As layers grown by molecular beam epitaxy (MBE) have been studied by deep level transient spectroscopy. When compared among the layers grown sequentially, the concentrations of the two dominant trap levels, ME5 (activation energy 0.63 eV) and ME6 (0.71 eV), are found to decrease markedly with the growth run number. The trap concentrations also depend sensitively on the choice of arsenic source material. These results show that the traps are closely associated with volatile impurities in arsenic materials.
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