Abstract
Arsenic (As)-doped ZnO films were obtained via thermal diffusion from low energy high dose implanted silicon substrates using thermal treatment. The implantation conditions, such as implantation dose and energy, were adjusted to allow more nonactivated dopants in the surface region of the substrate and to outdiffuse into ZnO films efficiently. With the proper implantation dose and energy, the ZnO films exhibited p-type conduction, which increased the hole concentration and preservation time in the air ambient. The maximum carrier concentration of the As-doped ZnO films was 8.06 X 10 18 cm -3 , and the resistivity reached 1.63 × 10 -1 Ω cm.
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