Abstract
AbstractThe effect of arsenic cracking on In incorporation in MBE‐grown InGaAs selective growth was systematically studied with changing the cracking cell temperature. Incorporation of In was greatly enhanced by the use of As2 molecular beam during the selective growth at 600 °C. On the other hand, almost no In was incorporated into the grown layer by the use of a conventional As4 molecular beam. The relation between InAs mole fraction and the cracking cell temperature was found to monotonously increase with the cracking cell temperature. It is probably because the ratio of As2 molecules increases with the cracking cell temperature. Not only at 600 °C but also at 580 °C, a selective growth was also successfully performed using As2 molecular beam by the formation of the “denuded zone”, with the InAs mole fraction of 10%. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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