Abstract
The sol-gel method is applied to the fabrication of antimony-doped tin dioxide thin films using SnCl4·4H2O and SbCl3 precursors. The effect of argon plasma treatment on the spin on fabricated thin films is studied as a function of the plasma treatment time. Changes in electrical conductivity are measured by a linear four-point probe method. The maximum increase in electrical conductivity is found to be 290%, from 138 to 400 S/cm, and the argon plasma reaction response time for the conductivity increase is fast. Finally, the reasons and mechanism for the noticeable resistivity decrease are discussed.
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