Abstract
ABSTRACTNitrogen containing amorphous carbon (a-CNx) films were prepared on silicon single crystal substrates by heating a carbon filament in low pressure nitrogen atmosphere and the effects of argon addition to nitrogen atmosphere were studied by changing the argon fraction under the total pressure of 100 Pa. The growth rate of the films is found to decrease with increasing the argon fraction. x-ray photoelectron spectroscopy shows that the films are composed of carbon and nitrogen and the optimal fraction of argon addition is observed for increasing the nitrogen concentration. Observations by atomic force microscopy reveal that the film surfaces are covered with particle-like features and the size of the features decreases drastically by argon addition. It is concluded that argon addition to the reactant gas is effective in synthesizing a-CNx films with the smooth surface and high nitrogen concentration
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