Abstract
Ar+ implantation was carried out on Al coated GaN nanowires for the formation of AlGaN ternary alloy. Vibrational studies show one-mode phonon behavior corresponding to longitudinal optical (LO) mode of A1 symmetry (A1(LO)) for the wurtzite phase of AlGaN nanowires in the random alloy model. Photoluminescence studies demonstrate the dominance of the defect related peak in random alloy as compared to as-grown GaN nanowires.
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