Abstract
The impact of annealing temperatures on microstructures of zirconium tin titanate (Zr 0.8Sn 0.2TiO 4, ZST) thin films grown by a sol–gel process is proposed. ZST thin films were deposited along the (1 0 0) orientation p-type Si substrate and were characterized by XRD, AFM, SIMS and TEM. Amorphous and polycrystal films were grown successfully on Si substrates with different annealing temperatures. The chemical compositions of the films were detected and showed a uniform concentration distribution for all species. Due to the interface layer formed during the annealing process, the dielectric constants of 81-nm-thick ZST films in the present study were ∼16.
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