Abstract
In order to study the influence of annealing temperature (from room temperature to 500 ℃) on the electrical properties of ZnO thin film and thin-film transistors (TFTs), we carefully characterize the ZnO-TFT by using a wide range of techniques including X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL). The results show that the ZnO-TFTs annealed at 400 ℃ have the best performance with mobility of 2.7 cm<sup>2</sup>/Vs, threshold voltage of 4.6 V, on/off current ratio of 5×10<sup>5</sup> and subthreshold swing of 0.98 V/Dec. The improvement of the electrical performance could be attributed to the decrease of carrier concentration, the enhancement of crystallization in ZnO films, and the improvement of interface between the oxide semiconductor layer and the insulation layer.
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