Abstract
The effect of annealing temperature on oxygen precipitation was investigated in various dose fast neutron irradiated Czochralski silicon (CZ-Si). Fourier Transform Infrared Absorption Spectrometer (FTIR) was used to measure the concentration of interstitial oxygen ([Oi]). Bulk microdefects (BMDs) were observed by optical microscope. The behavior of oxygen precipitation depends on the annealing temperature and the concentration of irradiation-induced defects. The mount of oxygen precipitates of irradiated samples is more than that in non-irradiation samples and increases with increasing the irradiation dose. Because of the effect of temperature on critical radius rcand the oxygen diffusivity, oxygen precipitation increase with the increase of temperature at the studied lower temperature range, while decrease with the increase of temperature at the studied higher temperature range. High density dislocation and stacking faults generate in irradiated sample.
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