Abstract
Bi0.85Nd0.15FeO3 films were prepared on Pt/Ti/SiO2/Si substrate by a sol-gel method, and annealed at different temperatures. The effect of annealing temperature on the crystal structure, dielectric, ferroelectric, and ferromagnetic properties was investigated. When the Bi0.85Nd0.15FeO3 films were annealed at 490−600°C, the single phase was obtained. Bi0.85Nd0.15FeO3 film annealed at 600°C showed good multiferroic properties with ɛr of 145 (at 1 MHz), Ms of 44.8 emu/cm3, and 2Pr of 16.6 μC/cm2.
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