Abstract
Gas sensors having ZnO or doped ZnO thin films as a sensing layer are faster in operation, consume low power, lower activation temperature and importantly it has great level of sensitivity. The development of nanostructure MOS is necessary for good sensing. Here Mg-Al doped ZnO is chosen as sensing layer. To synthesis Mg-Al co doped ZnO an easy and feasible way is chosen and synthesized via sol gel method. The sol gel technique is followed because of its doping homogeneity on molecular level, and crystallization temperature. The structural properties is discussed and characterized through SEM.
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