Abstract
In this work, we demonstrated the effect of annealing temperature (400℃- 600℃) on ferroelectric properties and reliability of ALD deposited TiN/HZO/TiN metal-ferroelectric-metal (MFM) capacitor stack. The thickness (9-nm) of HZO ferroelectric layer and its interface with electrodes were revealed by transmission electron microscope. The formation of ferroelectric phase for HZO annealed at different temperature were investigated by grazing incidence X-ray diffraction.The sample annealed at 600℃ shows high remanent polarization (2Pr) of 52.9 μC/cm2 and excellent endurance performances with higher than 1011 cycles at 3 V without breakdown. The time-dependent dielectric breakdown (TDDB) also indicated that samples with the higher annealing temperature exhibited better tBD than the samples with the lower annealing temperature. It is suggested that higher annealing temperature can enhance the crystalline quality as well as interface in the ALD deposited TiN/HZO/TiN capacitor . Figure 1
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