Abstract
Eu-doped aluminum nitride (AlN:Eu) thin films were fabricated and characterized in a way of white light generation. AlN exhibits blue luminescence originating from defect levels. Furthermore, Eu2+ demonstrates green luminescence, while Eu3+ emits red light. Consequently, white luminescence is anticipated in Eu-doped AIN thin films. The concept is to control the ratio of Eu2+/Eu3+ in the thin film to vary the emission colors. We aimed to manipulate the Eu valence ratio in AIN:Eu thin films by changing the annealing temperature and examining the resultant luminescence characteristics. Our findings revealed an increase in defect-related luminescence in AIN samples annealed at higher temperatures, along with a rise in the Eu2+ fraction. We explore these outcomes in relation to the structural models surrounding Al and Eu ions, as elaborated in the main text.
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