Abstract
The effect of annealing temperature on the electrical properties of low voltage ZnO-based ceramic films was studied by a novel sol–gel process. The experiment results show that Zn 7Sb 2O 12 and ZnCr 2O 4 phase can form in a lower annealing temperature (550 °C) by the solution doping, and the pyrochlore phase is not detected by X-ray diffractometer (XRD) from 550 °C to 950 °C. Sb 2O 3 phase can change to spinel phase completely; Bi 2O 3 and ZnO may be vaporized when the annealing temperature reaches 750 °C. The ZnO-based ceramic films with nonlinear coefficient of 20, nonlinear voltage of 5 V and the leakage current density of 0.5 μA/mm 2 can be gained at the proper annealing temperature.
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