Abstract
In this study, we investigated the Cu-doped ZnO (CZO) structure. This structure was deposited on the Si and glass substrates using the RF magnetron sputtering technique. Morphological and structural features of CZO thin films (CZOs), as-deposited and annealed at temperatures of 200, 400, and 600°C, were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), as well as atomic force microscopy (AFM). CZO film annealed at temperature of 600°C has a sharp peak, good homogeneity, and low surface roughness compared to others. Electrical properties of the MOS structures, which are of CZO interlayer, deposited on n-Si substrate, were characterized by I(V) measurement at room temperature. The fundamental electrical parameters were calculated by analyzing the forward-bias I(V) curves at room temperature. The series resistance Rs values of the device were also determined using thermionic emission theory and Cheung and Cheung methods. According to experimental results, Au|CZO|n-Si MOS structure annealed at 600°C has low Rs values compared to other investigated MOS structures in the present study. As a result, it was found that CZO structure annealed at 600°C is suitable for innovative and state-of-the-art electronic and optoelectronic device applications.
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