Abstract
In this study, the structural evolution of the CdTe/ZnS composite passivation films on the surface of infrared HgCdTe material before and after annealing was comparatively explored. The surface morphology and microstructure of the passive films before and after annealing were characterized by scanning electron microscope, X-ray diffraction, atomic force microscopy, and Raman and X-ray photoelectron spectroscopy to determine the effects of the annealing process on the surface crystal defects of the films. The results show that annealing at 320 °C for three hours can improve crystal quality, ameliorate the surface density, and reduce the dislocation density of grains, while the Hg grains inhibited by tellurium-rich growth during the annealing process return to the normal growth state, and the S signal can be detected near the surface after annealing. This finding indicates that high-temperature annealing promotes the inhibited grain growth and also causes diffusion of surface elements, thus smoothing the compositional gradient at the passivation interface of the films.
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