Abstract
The current investigation deals with the effect of post deposition annealing on the properties of Gadolinium oxide and its interface with silicon substrate. The films were deposited by radio-frequency magnetron sputtering and subsequently annealed in air and nitrogen ambient. Formation of interface layer was confirmed by fourier transform infrared (FTIR) spectroscopy and the variations in grain size were studied by powder X-ray diffraction (XRD). Capacitors with Gd2O3 film as a gate dielectric were fabricated using Al as the top electrode and the effect of interface layer in the flat band shift was examined. From this study, it was revealed that thermal annealing in nitrogen reduces oxide trap density and improves the device functionality by behaving as a barrier for oxygen diffusion.
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