Abstract
It is established that annealing of ion-implanted thin Ge0.96Mn0.04 films with a thickness of 120 nm induces an increase in the microwave resistivity and a change in the mechanism of dephasing of charge carriers. The effect of annealing on the microwave transport properties of the thin films is due to the diffusion-controlled aggregation of dispersed Mn2+ impurity ions to form Ge3Mn5 clusters.
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