Abstract
We have studied the effect of high-temperature (1273–1673 K) and low-temperature (523–873 K) anneals in air, O2, and N2 on the magnetic properties of Y3Fe5O12 and Y2.95La0.05Fe4.7Ga0.3O12 garnet ferrite films. The films, 5–15 μm in thickness, were grown on (111)-oriented gadolinium gallium garnet (Gd3Ga5O12) substrates by liquid phase epitaxy. High-temperature annealing was shown to change the saturation magnetization and increase the ferromagnetic resonance linewidth ΔH of the films. Low-temperature annealing at 723 K in flowing dry oxygen for 20 h reduces the ΔH of the ferromagnetic resonance by 18–25% and makes it insensitive to changes in temperature and ambient humidity.
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