Abstract
Herein, the impact of postdeposition annealing on resistive switching behavior of radio frequency magnetron sputtered WO3 thin films is reported. Films are deposited under glancing angle deposition (GLAD) configuration of sputtering at varying GLAD angle from 65° to 80°. Structure transition from monoclinic to orthorhombic phase in deposited WO3 films is perceived after ex situ annealing at temperature of 400 °C. Resistive switching properties show shift from bipolar to unipolar switching on postdeposition annealing. WO3 films show unipolar switching behavior after ex situ annealing for all prepared samples. The value of resistance in high resistance state is lowered after ex situ heating treatment and interestingly switching voltage also reduces to 3 V from 7 V after annealing treatment. The ratio of high to low resistance state for annealed WO3 film fabricated at 70° GLAD angle is achieved to be maximum (≈219). A detailed charge transport mechanism shows that ohmic behavior is dominant current conduction mechanism at lower applied voltage, while space charge limited current and Child's law are dominant at higher applied voltages. Obtained results encourage utilization of prepared WO3 thin films toward a wide variety of applications in optoelectronics, microelectronics, and environmental engineering along with advanced electronics such as resistive memory devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
