Abstract
In this study, a simple hot-injection method to synthesize high-quality inorganic perovskite cesium lead iodide (CsPbI3) quantum-dots (QDs) was demonstrated. Adding CsPbI3 QDs into the organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a composite perovskite film, annealed by different temperatures, was found to be effectively enhanced by the perovskite crystallization. The intensity of the preferred peak (110) of MAPbI3 was enhanced by increasing the size of the crystal and reducing the cluster crystal. The densest film can be found at annealing temperature of 140 °C. The full width half maximum of MAPbI3 and CsPbI3 was analyzed through XRD peak fitting. This was a huge breakthrough for QDs doped perovskite films.
Highlights
The past few years, we have witnessed the remarkably rapid development of perovskite solar cells (PSC) [1,2,3]
It can be observed that the luminescence properties of the four bottles of quantum dots have not changed a lot, which represents that we can prepare stable perovskite quantum dots
We found an unknown emission peak at 663 nm
Summary
The past few years, we have witnessed the remarkably rapid development of perovskite solar cells (PSC) [1,2,3]. Oxygen-free and high-temperature environment, the thermal stability and lifetime of the all-inorganic perovskite quantum dots prepared by the hot-injection method are quite excellent. Since there is no report of the effect by doping all-inorganic quantum dots into MAPbI3 thin films, CsPbI3 is added into MAPbI3 to assist the crystal growth of MAPbI3. Through the annealing for solution of the thin film, the perovskite composite material is successively deposited on the glass substrate to produce CsPbI3-QDs doped perovskite thin films. This treatment of annealing can effectively remove excess solvent and favor the formation of the perovskite crystal structure. A detailed study for the formation mechanism of between structure of crystal and temperature is presented
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