Abstract
In this paper, we describe Raman spectroscopic study for evaluating the influence of vacuum annealing on the surface modification of the focused ion beam (FIB) induced damaged layer on a single crystalline Si (c-Si) substrate. The damaged layer consisting of amorphous silicon (a-Si) with implanted Ga ions is formed after irradiating FIB onto the c-Si surface. After vacuum annealing at 700 °C for 10 s, the Raman spectrum peak of poly crystalline Si (p-Si) appears. With increasing annealing time, the spectral parameters, peak shift, peak intensity, and full width at half maximum (FWHM), for p-Si and c-Si change. Through the comparison between the phase fraction of a-Si, p-Si, and c-Si in the FIB damaged layer and the mechanical properties of the FIB-processed Si nanowires obtained in the quasistatic tensile testing, a recovery of the damaged layer by annealing is discussed.
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