Abstract
We prepared Ce3+-doped silica by the sol-gel method and studied the effect of annealing on fluorescence of these samples. Different fluorescence was observed for samples annealed at different temperatures, changing gradually from solution like fluorescence to fluorescence similar to that observed in the Ce3+-doped silica prepared by chemical vapor deposition. It was found that the emission intensity first decreased with increasing annealing temperature until 500 °C, and then increased with the temperature ranging from 500 to 950 °C. Meanwhile, the emission peak showed a large red shift and an obvious broadening. These changes were attributed to the annealing-induced structural evolution in silica: Ce3+ ions changed from coordinating with water and terminal OH-groups to embedding in silica network.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
