Abstract
In this paper, a series of 200-nm-thick, hydrogen-free, amorphous carbon (a-C) films deposited on heavily doped Si (111) by filtered arc deposition (FAD) were isothermally annealed at 200, 400, 600, 800, and 1000°C for 30 min. Electron field emission from these films was studied by using a diode structure device. It was shown that field emission properties of the films were degraded with increasing annealing temperatures. But after being annealed at 800°C for 30 min, the a-C film showed enhanced field emission properties compared with the unannealed a-C film. Atomic force microscopy (AFM) showed that a-C film annealed at 800°C had dense protrusions on the surface. It was shown that annealing can have a remarkable effect on field-emission properties of the a-C films.
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