Abstract
The effect of the annealing temperature on the I–V, C–I, and G–V characteristics and transparency of gallium-oxide films is investigated. The films are fabricated by the thermal evaporation of Ga2O3 powder on n-GaAs wafers. It is shown that the films which are amorphous after deposition crystallize upon annealing at temperatures Tan ≥ 800°C. The electrical characteristics and photoresponse of the V/Ni-GaAs-GaAs-GaxOy-V/Ni samples to visible radiation depend on the structure and phase composition of the films.
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